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Silicon Photonic Chips
Data Centre 800G-DR4/FR4 Heterogeneous Integration Silicon Photonics, Data Centre 1.6T-DR8/FR8 Heterogeneous Integration Silicon Photonics, Silicon Integrated High Speed Electro-Optical Analogue Modulator Chip, etc.
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The bridge between data centre servers and switches is an optical module product. Optical modules are one of the indispensable products that make up a data centre, and optical chips are the core products that make up optical modules.
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Data Centre Interconnection Optical Module is used for the connection between servers and switches, switches and switches, etc. It is used for data transmission and exchange. Optical Module is an indispensable part of Data Centre, and optical chip is the core product that makes up the optical module.
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Combined Packaging Optical is the co-packaging of chips and modules by assembling the switching chip and the optical engine together in the same . The photonic chip is an important part of the optical engine.
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/ What we offer / Research / 4x400G Silicon Photonic Chip (1.6T-DR4)

4x400G Silicon Photonic Chip (1.6T-DR4)

Data Centre 800G-DR4/FR4 Heterogeneous Integration Silicon Photonics, Data Centre 1.6T-DR8/FR8 Heterogeneous Integration Silicon Photonics, Silicon Integrated High Speed Electro-Optical Analogue Modulator Chip, etc.


Description：

The 4 × 400 Gbps silicon photonic heterogeneous-integrated differential modulator chip integrating four channels of high-performance differential Mach–Zehnder modulators (MZMs) and multiple passive components. It features a 1-input/4-output optical configuration, in which one optical input signal is routed to four high-bandwidth modulators and output through four optical ports. Each high-bandwidth modulator is equipped with a dedicated heater for operating-point adjustment.

1.6T-DR4.jpg

Features:

  • 4-channel high-performance MZM silicon photonic heterogeneous-integrated modulator

  • Operating wavelength range: 1310 ± 6.5 nm

  • High electro-optic bandwidth

  • Low drive voltage

  • Low insertion loss

  • Edge-coupled configuration

  • Customizable chip dimensions


Parameter：

Electro-Optic Bandwidth 110 GHz
On-Chip Insertion Loss 10 dB
Single-Pass Coupling Loss 2 dB
Static Extinction Ratio 25 dB
Dynamic Extinction Ratio 4 dB
Heater Half-Wave Voltage (Vπ) 2 V
Driver Drive Voltage (Vpp) 3 V


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