Data Centre 800G-DR4/FR4 Heterogeneous Integration Silicon Photonics, Data Centre 1.6T-DR8/FR8 Heterogeneous Integration Silicon Photonics, Silicon Integrated High Speed Electro-Optical Analogue Modulator Chip, etc.
Description:
The chip is fabricated using InnovSemi’s proprietary 8-inch wafer-scale silicon photonics heterogeneous integration platform, combining mature CMOS silicon photonics technology with thin-film lithium niobate (TFLN) through advanced die-to-wafer bonding. It achieves the complementary advantages of low-loss silicon photonics and high-performance electro-optic modulation, delivering low insertion loss, low drive voltage, and ultra-high bandwidth.
Key performance includes an electro-optic 3 dB bandwidth >110 GHz and Vπ ≈ 3 V. The differential-drive design is compatible with existing silicon photonics drivers and supports reliable, high-yield volume manufacturing.
The platform enables a smooth upgrade path from 200 Gbps/lambda (1.6T) to 400 Gbps/lambda (3.2T), helping customers accelerate product development and deployment for next-generation optical interconnects.

SUZHOU InnovSemi CO.,LTD